Han LED factory plus code GaN substrate research and development to seize the LED lighting market

In order to compete with Chinese manufacturers, Seoul Semiconductor (Seoul Semiconductor) and LG are actively developing GaN substrates. The packaging and testing plant also intends to replace epoxy resin (Epoxy) with silicon to enhance product efficiency and extend service life. Korean media reported on the 17th that LED lighting is mainly based on sapphire substrates and silicon carbide (SiC) substrates. Hanfang researched GaN-on-GaN substrates, which can solve the problem of poor displacement. Seoul Semiconductor invested more than 10 years ago in research and development, obtained relevant patents, and previously launched nPola products, which are 5-10 times brighter than current LED lighting. The company claims to announce more advanced products than nPola soon. LG has also joined the development of this technology, but GaN is expensive, the company is still adjusting the product launch schedule. In the packaging and testing plant, Han Factory began to use silicon as a packaging material to replace epoxy resin. When the epoxy resin is used for 3000-6000 hours, color shift phenomenon occurs, and the silicon usage time is 10 times longer, and 30,000-50,000 times can be used. In addition, manufacturers are also developing materials that are cheaper than silicon. According to industry insiders, the performance of GaN and silicon is better than current materials. The disadvantage is that it is expensive. To increase market competitiveness, it is necessary to lower prices and improve performance. Japanese media reported that Toshiba plans to mass-produce white LED products in 2014, with the goal of significantly expanding its monthly production capacity to 150 times. The white LED produced by Toshiba uses GaN-on-Si LED components jointly developed by the company and American white LED manufacturer Bridgelux, which is more competitive with current LED components using sapphire wafers. Toshiba acquired the white LED wafer related assets such as GaN-on-Silicon technology owned by Preh in April 2013.