Bridgelux announces the first silicon substrate LED light efficiency of 135lm / W

[High-tech LED] Bridgelux, a US LED chip manufacturer, demonstrated in March this year that the GaN 1.5mm diameter power LED on silicon substrate reached 135lm/W at 4730K color temperature and 350mA current intensity. Recently, Bridgelux announced the refresh of the light-effect record, and said that this commercial-grade silicon substrate LED can operate normally at very low operating voltage.

Bridgelux says its silicon-based LEDs are at the same level as the most advanced sapphire substrate LEDs. The luminous efficiency of the cold white fluorescent lamp has reached 160lm/W, the correlated color temperature is 4350K, and the luminous efficiency of the warm white fluorescent lamp has reached 125lm/W, the correlated color temperature is 2940K, and the color rendering index is 80.

According to Bridgelux, the 1.5mm sealed blue LED drive current is 350mA, and the forward voltage is 2.75V, which can emit 591mW of light energy, achieving 59% socket efficiency, which can be adapted to high current density applications. With a drive current of 1A and a forward voltage of 3.21V, this LED emits 1.52W of blue light energy, making it 47% socket efficient. An 8-inch LED chip with a dominant wavelength of 455 nm has proven to have good wavelength uniformity.

Conventional LEDs use sapphire or silicon carbide substrate materials at relatively high prices, and manufacturers can reduce the cost by about 75% by attaching GaN materials to large-capacity semiconductor materials on silicon substrates. However, the coefficient of thermal expansion of GaN is larger than the coefficient of thermal expansion of silicon, which may cause the epitaxial layer to break at room temperature or when the epitaxial layer is attached or the wafer may be bent. Bridgelux said its patented buffer layer technology will effectively solve this hazard and keep the chip flat at room temperature. Currently, this patent has been fully confirmed in experiments on 8-inch silicon substrates.

Bridgelux said its first commercially available GaN-on-Si product will be available in two years and will work to make silicon substrates completely replace sapphire substrates in industrial production as early as possible.

It is reported that Bridgelux has maintained a light asset business model with the goal of collaborating with existing semiconductor manufacturers through its intellectual property advantages in LED epitaxial layers. Bridgelux predicts that working with existing semiconductor manufacturers will reduce costs, bring significant benefits and allow natural capital backflow.